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Product Detailed Parameters
- Description：SIC MOSFET, TO-247-4L, N, 105A,
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：30mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id：4V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 18 V
- Vgs (Max)：+18V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The DIF065SIC015 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, housed in a TO-247-4L package. It features an N-channel configuration with a drain-source breakdown voltage of 650 V and a continuous drain current of 105 A at 25°C. The device exhibits a maximum on-state resistance of 30 mΩ at 175°C and supports a junction temperature up to 175°C. Key dynamic parameters include a total gate charge of 145 nC, turn-on delay of 26 ns, and fall time of 8 ns. Power dissipation is rated at 357 W at 25°C case temperature.
Feature Summary
- Kelvin source pin implementation for fast switching and reduced noise levels at the gate terminal
- Avalanche rated capability for robust operation under transient conditions
- Wide bandgap SiC material providing large clearance and creepage distances
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH adherence requirements with the supplier before finalizing orders.
Selection Notes
Select this component for high-frequency power conversion where low conduction losses are critical. The Kelvin source pin simplifies driver design by isolating the gate drive loop from source inductance. Ensure thermal management accommodates the 0.21 K/W junction-to-case thermal resistance for optimal performance.
Part Context
This part belongs to Diotec's wide bandgap SiC MOSFET portfolio, designed to replace traditional silicon devices in high-voltage applications. The TO-247-4L package facilitates efficient heat dissipation through the heat flange, supporting industrial and commercial-grade reliability standards.
Replacement Considerations
Check datasheet compatibility for direct replacement. Verify pinout alignment, specifically the Kelvin source connection, as it differs from standard three-terminal packages. Ensure gate drive voltage limits (-10V to +23V) match existing circuit designs.
