DIF120SIC022

$70.97

Description：SIC MOSFET, TO-247-4L, N, 120A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:af13a6deeeb8 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-4L, N, 120A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：22.3mOhm @ 75A, 18V
Vgs(th) (Max) @ Id：4V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs：269 nC @ 18 V
Vgs (Max)：+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds：4817 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：340W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DIF120SIC022

Overview

The DIF120SIC022 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor. It features a TO-247-4L package with a Kelvin source pin for optimized switching performance. The device provides a drain-source voltage of 1200 V and a continuous drain current of 120 A at 25°C case temperature. Key electrical parameters include an on-state resistance below 22.3 mΩ, a power dissipation rating of 580 W, and a maximum junction temperature of 175°C.

Feature Summary

Kelvin source configuration for fast switching and reduced gate noise
Avalanche rated capability for robust operation
Low on-state resistance to minimize conduction losses
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes full AEC-Q101 qualification. Confirm the required reliability grade matches the application environment before procurement.

Selection Notes

Select this component for high-efficiency power conversion requiring low thermal resistance and fast switching speeds. The TO-247-4L package facilitates effective heat dissipation. Ensure the gate drive circuit supports the specified threshold voltage and total gate charge requirements for optimal dynamic performance.

Part Context

This part belongs to the DIF series of SiC MOSFETs from Diotec Semiconductor. These devices utilize wide bandgap silicon carbide material to achieve superior performance compared to traditional silicon MOSFETs. The series is designed for applications demanding high voltage handling and efficient power management.