DIF120SIC053

$8.83

Description：SIC MOSFET, TO-247-4L, N, 65A, 1
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:b5870d0b12e4 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-4L, N, 65A, 1
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：53mOhm @ 33A, 18V
Vgs(th) (Max) @ Id：4V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs：121 nC @ 15 V
Vgs (Max)：+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds：2070 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DIF120SIC053

Overview

The DIF120SIC053 is a Silicon Carbide (SiC) N-Channel MOSFET manufactured by Diotec Semiconductor. It features a 1200 V drain-source breakdown voltage and a maximum continuous drain current of 68 A at 25°C case temperature. The device exhibits a low on-state resistance of 40 mΩ typical at 25°C, with a power dissipation rating of 278 W. Packaged in a TO-247-4L configuration, it incorporates a Kelvin source pin to facilitate fast switching and minimize gate noise.

Feature Summary

Utilizes Silicon Carbide wide bandgap material for high thermal stability and efficiency.
Incorporates a dedicated Kelvin source pin to enable rapid switching speeds and reduce gate interference.
Features large clearance and creepage distances within the package structure.
Designed with low gate charge characteristics to support efficient power conversion.

Applications

Electric vehicle charging stations
Solar inverters
Battery chargers
General power supplies

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH adherence requirements with the supplier prior to procurement.

Selection Notes

Select this component for applications requiring high-voltage handling and low conduction losses. Ensure adequate heatsinking is provided, as the drain current decreases significantly at elevated case temperatures. Verify that the gate drive circuitry supports the recommended voltage range of -4 V to 18 V for optimal performance.

Part Context

This part belongs to Diotec's portfolio of Silicon Carbide MOSFETs designed for high-performance power electronics. It is intended for commercial and industrial grade applications where reliability under high stress conditions is required. The TO-247-4L package allows for effective thermal management through direct mounting to heat sinks.

Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

FAQ

What is the function of the fourth pin in the TO-247-4L package?

The fourth pin serves as a Kelvin source, which isolates the source connection from the main current path to ensure fast switching and reduce noise levels at the gate terminal.