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Product Detailed Parameters
- Description：MOSFET TO-220AB N 80V 80A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：85 V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3742 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The Diotec Semiconductor DIT080N08-AQ is an N-Channel Power MOSFET housed in a TO-220AB package. It features a drain-source voltage (VDSS) of 85 V and a continuous drain current (ID) of 80 A at TC = 25°C, limited by the package. The device utilizes advanced trench technology to achieve a low on-state resistance (RDS(on)) of less than 4.8 mΩ at VGS = 10 V and ID = 50 A. It supports a power dissipation (PD) of 62.5 W at 25°C case temperature and includes avalanche rating capabilities with an energy handling capacity of 144 mJ.
Feature Summary
- Advanced Trench Technology for optimized performance
- Low on-state resistance to minimize conduction losses
- Fast switching times with low gate charge characteristics
- Avalanche rated for robustness against transient energy events
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify that the specific ordering suffix matches the required automotive qualification level. The -AQ designation indicates the component is currently undergoing AEC-Q101 qualification rather than holding full compliance certification. Confirm final acceptance status with the manufacturer before integrating into designs requiring strict automotive grade validation.
Selection Notes
Select this component for applications requiring high current handling within an 85 V system architecture. The TO-220AB package facilitates effective thermal management via heat sinking. Ensure the design accounts for the 150°C maximum junction temperature limit and verify that the gate drive voltage aligns with the specified threshold and on-resistance test conditions.
Part Context
This part belongs to the Diotec Semiconductor N-Channel Power MOSFET family designed for commercial and industrial grade applications. The standard version is intended for general use, while variants with specific suffixes address automotive reliability standards. The device is manufactured using silicon technology and complies with RoHS directives excluding specific exemptions.
FAQ
What does the -AQ suffix indicate for this MOSFET?
The -AQ suffix signifies that the DIT080N08-AQ is currently in the process of AEC-Q101 qualification, distinguishing it from fully compliant automotive-grade versions.
Is the DIT080N08-AQ rated for avalanche operation?
Yes, the datasheet specifies that the device is avalanche rated, capable of handling a single pulse avalanche energy of 144 mJ under defined test conditions.
