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Product Detailed Parameters
- Description：MOSFET TO220AB N 100V 0.0099OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DIT100N10 is a commercial-grade N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-220AB package. It features an Advanced Trench Technology with a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 100 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 13 mΩ at VGS = 10 V and ID = 40 A. It supports a power dissipation (PD) of 200 W at 25°C and operates within a junction temperature range of -55°C to +175°C. Key dynamic parameters include a total gate charge (Qg) of 85 nC and single pulse avalanche energy (EAS) of 800 mJ.
Feature Summary
- Advanced Trench Technology for low on-state resistance and fast switching times
- Avalanche rated capability for robust operation under transient conditions
- Logic-level gate drive characteristics with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific ordering suffix and packaging configuration directly with Diotec Semiconductor or authorized distributors before procurement. Confirm that the commercial grade specification aligns with your application's reliability requirements, as this component lacks automotive qualification. Ensure thermal management designs account for the specified thermal resistance values to maintain safe operating temperatures during operation.
Selection Notes
Select the DIT100N10 for applications requiring high current handling up to 100 A and low conduction losses indicated by its sub-13 mΩ on-state resistance. Consider its 100 V breakdown voltage and 200 W power dissipation capabilities for standard industrial and commercial power conversion tasks. Evaluate the thermal design constraints associated with the TO-220AB package and the specified thermal resistance to ensure adequate heat sinking for sustained performance.
Part Context
This component belongs to Diotec Semiconductor's N-Channel Power MOSFET portfolio, utilizing Advanced Trench Technology. It is designed for general-purpose commercial and industrial applications where standard reliability levels are sufficient. Unlike automotive-qualified variants, this part does not carry AEC-Q101 certification, positioning it specifically for cost-sensitive or non-critical commercial electronics such as consumer power tools and standard DC drives.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins when considering alternative manufacturers' devices.
