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Product Detailed Parameters
- Description：MOSFET TO220AB N 85V 0.0035OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：85 V
- Current - Continuous Drain (Id) @ 25°C：195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.95mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：16880 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DIT195N08 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-current applications. It features a Drain-Source voltage (VDSS) of 85 V and a continuous drain current (ID) of 215 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 3.5 mΩ at VGS = 10 V. With a power dissipation rating of 350 W and a junction temperature range up to 175°C, it supports robust thermal performance. Key dynamic characteristics include a total gate charge of 296 nC and an avalanche energy rating of 2880 mJ.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Avalanche rated with high single-pulse energy capability
- Fast switching times combined with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
Procurement Notes
Verify the specific ordering suffix when purchasing. Standard commercial grade parts lack automotive certifications. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm that the required reliability grade matches the application environment before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring high current handling and low conduction losses. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage meets the 10 V requirement for optimal RDS(on). Consider the avalanche energy rating if inductive load switching is present in the system design.
Part Context
This part belongs to Diotec's lineup of discrete semiconductor solutions. It utilizes advanced trench technology to achieve superior electrical performance compared to standard planar devices. The TO-220AB package provides mechanical stability and facilitates heat sinking for high-power industrial and commercial electronics.
Replacement Considerations
Check datasheets for alternative N-Channel MOSFETs with matching VDSS, ID, and RDS(on) specifications. Verify pinout compatibility and thermal resistance values. Automotive replacements must meet AEC-Q101 standards if the original part carries the -Q or -AQ suffix.
