DIW018N65

$4.81

Description：MOSFET, TO-247-3L, N, 650V, 18A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:e33d16c5ee7d Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET, TO-247-3L, N, 650V, 18A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 380 V
FET Feature：-
Power Dissipation (Max)：155W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW018N65

Overview

The DIW018N65 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-247 package. It features a drain-source voltage (VDSS) of 650 V and a continuous drain current (ID) of 18 A at 25°C case temperature. The device exhibits a typical on-state resistance (RDS(on)) of 155 mΩ at VGS = 10 V and ID = 10 A. Maximum power dissipation is rated at 155 W at 25°C. The junction temperature range spans from -55°C to +150°C. Single pulse avalanche energy (EAS) is specified at 480 mJ.

Feature Summary

Advanced Trench Technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated and 100% avalanche tested
Compliant to RoHS, REACH, and Conflict Minerals regulations

Applications

PFC circuits
Power Supplies and Chargers
BLDC motor drives
Battery powered tools and devices
EC motors and inverters

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm the required reliability grade matches the application needs before finalizing orders.

Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability. The TO-247 package supports significant power dissipation up to 155 W. Ensure thermal management aligns with the 0.8 K/W junction-to-case thermal resistance. Consider the -Q suffix if automotive-grade reliability standards are mandatory for the design.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET portfolio utilizing advanced trench technology. It is designed for commercial and industrial grade applications. The product line includes variants with different qualification levels, specifically addressing automotive standards through specific suffixes for AEC-Q101 compliance or qualification status.