DIW030N65K

$3.11

Description：MOSFET TO-247-3L N 650V 30A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:bb2e8f712395 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET TO-247-3L N 650V 30A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：65mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：104 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：5274 pF @ 350 V
FET Feature：-
Power Dissipation (Max)：156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW030N65K

Overview

The DIW030N65K is an N-Channel Power MOSFET manufactured by Diotec Semiconductor in a TO-247 package. It features a Drain-Source voltage (VDSS) of 650 V and a continuous Drain current (ID) of 30 A at 25°C case temperature, dropping to 19 A at 100°C. The maximum Drain-Source on-state resistance (RDS(on)) is 65 mΩ at VGS = 10 V and ID = 20 A. The device supports a single pulse avalanche energy (EAS) of 1567 mJ and has a maximum junction temperature (Tj) of 150°C. Thermal resistance from junction to case (RthC) is less than 0.8 K/W.

Feature Summary

Advanced Trench Technology for low on-state resistance
ESD protected Gate structure
Avalanche rated with 100% Avalanche testing
Fast switching times and low gate charge

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm the required reliability grade matches your application needs before finalizing orders.

Selection Notes

Select this component for high-voltage applications requiring robust avalanche performance. Ensure thermal management accounts for the RthC of less than 0.8 K/W. Verify that the operating junction temperature does not exceed 150°C. Consider the -Q or -AQ variants if automotive-grade standards are necessary for the system design.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup utilizing Advanced Trench Technology. It is designed for commercial and industrial grade applications. The product line includes variants compliant with AEC-Q101 standards for automotive use cases.