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Product Detailed Parameters
- Description：SIC MOSFET, TO-247-3L, N, 150A,
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：15mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id：4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs：236 nC @ 20 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：7169 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：550W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
Download product information
Overview
The DIW065SIC015 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, housed in a TO-247 package. It features an N-channel configuration with a drain-source breakdown voltage of 650 V and a continuous drain current of 150 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 15 mΩ at 175°C and supports a power dissipation of 550 W. Key dynamic parameters include a total gate charge of 236 nC, turn-on delay of 25 ns, and fall time of 27 ns. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Advanced planar technology for low on-state resistance
- Fast switching times with low gate charge
- Avalanche rated and 100% avalanche tested
- Compliant with RoHS, REACH, and Conflict Minerals standards
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Charging Stations
- Inverters
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial or industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm these designations match your project's reliability requirements before procurement.
Selection Notes
Select this component for high-efficiency power conversion requiring fast switching and high thermal stability. Ensure adequate heat sinking to manage the 550 W power dissipation rating. Verify that the external gate resistance aligns with the switching performance characteristics defined in the datasheet.
Part Context
This part belongs to Diotec's Silicon Carbide MOSFET portfolio, designed for applications demanding superior energy efficiency compared to traditional silicon devices. The TO-247 form factor facilitates robust mounting in industrial and automotive-grade power electronics systems.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the recommended Gate-Source voltage range?
The recommended Gate-Source voltage range is -4 V to +18 V.
Is the DIW065SIC015 suitable for automotive applications?
Standard versions are commercial/industrial grade. Automotive suitability requires units with the -Q (compliant) or -AQ (qualified) suffix indicating AEC-Q101 status.
