DIW065SIC049

$26.16

Description：SIC MOSFET, TO-247-3L, N, 60A, 6
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:4aa7ee642ef8 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-3L, N, 60A, 6
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：49mOhm @ 30A, 18V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：128 nC @ 20 V
Vgs (Max)：+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2612 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：550W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW065SIC049

Overview

The DIW065SIC049 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor, housed in a TO-247 package. It features a drain-source breakdown voltage of 650 V and a continuous drain current of 60 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 49 mΩ at 175°C and supports a power dissipation of 395 W. Key dynamic parameters include a total gate charge of 128 nC, turn-on delay of 12 ns, and fall time of 9 ns. Thermal resistance from junction to case is rated at 0.21 K/W.

Feature Summary

Advanced planar technology for low on-state resistance
Fast switching times with low gate charge
Avalanche rated with 100% avalanche testing

Applications

DC/DC Converters
Power Supplies
DC Drives
Charging Station
Inverter

Procurement Notes

Verify the specific suffix when ordering: standard commercial grade, -Q for AEC-Q101 compliant, or -AQ for AEC-Q101 qualified. Confirm RoHS compliance status as exemptions may apply. Ensure thermal management aligns with the specified junction-to-case resistance. Validate that the application environment matches the commercial/industrial reliability grade defined in the datasheet.

Selection Notes

Select this component for high-voltage applications requiring efficient power conversion. The 650V rating suits systems operating below this threshold with safety margins. Consider the 49mΩ resistance limit at elevated temperatures for thermal design. Evaluate switching losses against the provided dynamic characteristics for frequency requirements. Check if automotive qualification is needed to determine between standard and -AQ suffixes.

Part Context

This SiC MOSFET belongs to Diotec's silicon carbide portfolio, designed for commercial and industrial grade applications. It utilizes advanced planar technology to achieve low conduction losses. The device is intended for use in environments where higher efficiency and faster switching are required compared to traditional silicon devices. It is not designated for life-support systems without customer validation.