DIW085N06

$1.86

Description：MOSFET TO-247-3L N 65V 85A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:fff6f047d51f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET TO-247-3L N 65V 85A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.1mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3704 pF @ 34 V
FET Feature：-
Power Dissipation (Max)：240W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW085N06

Overview

The DIW085N06 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-247-3L package. It features a Drain-Source voltage (VDSS) of 65 V and a continuous Drain current (ID) of 85 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 9.1 mΩ at VGS = 10 V and ID = 40 A. Maximum power dissipation (PD) is rated at 240 W at 25°C case temperature. The component supports a peak drain current of 340 A and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Technology for optimized performance
Avalanche rated with 100% avalanche testing
Low on-state resistance and low gate charge
Fast switching times suitable for high-frequency applications

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes qualification status. Confirm mechanical data such as tube packaging and UL 94V-0 case material requirements against your assembly specifications before finalizing orders.

Selection Notes

Select this component for designs requiring high current handling up to 85 A and robust avalanche energy capability of 450 mJ. Ensure thermal management strategies account for the thermal resistance from junction to case being less than 0.52 K/W. Verify that gate drive levels support the standard level gate drive characteristics and threshold voltage range of 2 V to 4 V for reliable switching.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, utilizing advanced trench technology. It is designed for commercial and industrial grade applications. The product complies with RoHS directives (excluding exemption 7a-I), REACH regulations, and conflict minerals standards. It is distinct from automotive-grade variants which carry specific suffixes.