DIW120SIC022-AQ

$42.61

Description：SIC MOSFET, TO-247-3L, N, 120A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:52657a3005f9 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET, TO-247-3L, N, 120A,
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：22.3mOhm @ 75A, 18V
Vgs(th) (Max) @ Id：4V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs：269 nC @ 18 V
Vgs (Max)：+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds：4817 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：340W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW120SIC022-AQ

Overview

The DIW120SIC022-AQ is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor. It features a 1200 V drain-source voltage rating and a continuous drain current of 120 A at 25°C case temperature. The device has a maximum on-state resistance of 22.3 mΩ and supports a peak drain current of 250 A. It operates within a junction temperature range of -55°C to +175°C with a power dissipation capacity of 580 W.

Feature Summary

Utilizes SiC wide bandgap material for low on-state resistance and fast switching times.
Features avalanche-rated construction with 100% avalanche testing.
Includes low gate charge characteristics for efficient drive requirements.
Suffix -AQ indicates the component is in AEC-Q101 qualification.

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools

Procurement Notes

Verify that the specific ordering suffix matches the required automotive qualification level, as the -AQ designation denotes AEC-Q101 qualification status rather than standard commercial grade. Confirm package type and thermal management requirements align with the specified power dissipation limits before finalizing procurement specifications.

Selection Notes

Select this component for high-efficiency power conversion applications requiring robust performance under hard switching conditions. The low on-state resistance minimizes conduction losses, while the wide operating temperature range ensures reliability in demanding industrial environments. Ensure adequate heat sinking is provided to maintain junction temperatures within safe operational limits during continuous operation.

Part Context

This part belongs to Diotec's Silicon Carbide MOSFET portfolio, designed to replace traditional silicon devices in high-voltage applications. The TO-247 package facilitates through-hole mounting, suitable for industrial and commercial grade systems where high current handling and thermal stability are critical design parameters.