DIW120SIC059-AQ

$21.19

Description：MOSFET TO-247-3L N 65A 1200V
Series：-
Mfr：Diotec Semiconductor
Package：Tube

SKU:f59737c5dae3 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET TO-247-3L N 65A 1200V
Series：-
Mfr：Diotec Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：53mOhm @ 33A, 18V
Vgs(th) (Max) @ Id：4V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs：121 nC @ 15 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2070 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DIW120SIC059-AQ

Overview

The DIW120SIC059-AQ is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor. It features a 1200 V drain-source breakdown voltage and an on-state resistance of less than 53 mΩ at 25°C. The device supports a continuous drain current of 68 A at 25°C case temperature, with a peak drain current rating of 100 A. Power dissipation reaches 278 W at 25°C. Operating junction temperatures range from -55°C to +175°C. The component utilizes TO-247 packaging and incorporates advanced planar technology for low gate charge and fast switching times.

Feature Summary

Advanced planar technology providing low on-state resistance
Fast switching characteristics with low gate charge
Avalanche rated and subjected to 100% avalanche testing
Suffix -AQ indicates compliance with AEC-Q101 qualification standards

Applications

DC/DC Converters
Power Supplies
DC Drives
Charging Stations
Inverters

Procurement Notes

Verify the specific suffix designation when ordering. The -AQ suffix confirms AEC-Q101 qualification status. Confirm RoHS exemption details regarding lead content if required by your manufacturing process. Ensure thermal management aligns with the specified power dissipation limits at the intended operating temperature.

Selection Notes

Select this component for high-voltage applications requiring robust avalanche performance. The TO-247 package facilitates through-hole mounting. Evaluate thermal resistance requirements against the 0.44 K/W junction-to-case specification. Consider the low gate charge for efficient driver design in high-frequency switching environments.

Part Context

This part belongs to Diotec's Silicon Carbide MOSFET portfolio. The product line includes variants with different voltage ratings and on-resistance values. The DIW120SIC059 series targets commercial and industrial grade applications. Automotive-grade versions are distinguished by their specific qualification suffixes.