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DKI03062 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is MOSFET N-CH 30V 48A TO252. Review the specifications below when checking this part for your BOM.
The DKI03062 is a 30 V N-channel Trench Power MOSFET from Sanken Electric USA Inc. It features a maximum continuous drain current of 48 A and a low on-resistance of 6.5 mΩ at VGS = 10 V. The device supports 4.5 V gate drive with a total gate charge of 9.3 nC, enabling high-speed switching. Packaged in a TO-252 format, it includes an integrated body diode with a reverse recovery time of 28.5 ns. The component operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific datasheet revision before procurement, as the document indicates this part is not recommended for new designs. Confirm that the TO-252 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified thermal resistance values under your expected operating conditions.
Select this component for applications requiring robust performance at 30 V with moderate current handling up to 48 A. The low gate charge facilitates driver efficiency in high-frequency switching environments. Consider the thermal derating curves when designing heat dissipation solutions to maintain reliability within the specified operating temperature limits.
This N-channel MOSFET belongs to Sanken's trench technology lineup, designed for general-purpose electronic equipment. It utilizes a planar structure to achieve low on-resistance and fast switching speeds. The component is compliant with RoHS directives and undergoes 100% unclamped inductive load testing to ensure quality standards.
The datasheet explicitly states that the DKI03062 is not recommended for new designs. Engineers should consult Sanken Electric for updated alternatives or newer generations of power MOSFETs suitable for modern design implementations.
The maximum pulsed drain current is 96 A, provided the pulse width is less than or equal to 100 µs and the duty cycle does not exceed 1%.
The static drain-to-source on-resistance is specified as 6.5 mΩ max at VGS = 10 V and increases to 10.5 mΩ max at VGS = 4.5 V.
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