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DKI06108 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is MOSFET N-CH 60V 47A TO252. Review the specifications below when checking this part for your BOM.
The DKI06108 is a 60 V N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a maximum continuous drain current of 47 A and a low on-resistance of 9.7 mΩ at VGS = 10 V. The device exhibits a total gate charge of 16.9 nC, enabling high-speed switching capabilities. It supports 4.5 V gate drive operation and includes an integrated body diode with a reverse recovery time of 34.8 ns. The component is housed in a TO-252 package and is rated for a junction temperature up to 150 °C.
Verify the specific datasheet revision (Rev.1.5) when sourcing components. Confirm that the TO-252 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified thermal resistance values under your operating conditions. Check for RoHS compliance documentation if required by your manufacturing standards.
Select this component for applications requiring moderate voltage blocking with high current handling. Evaluate the thermal resistance parameters against your system's heat dissipation capabilities. Consider the 4.5 V gate drive compatibility if using lower-voltage logic controllers. Verify that the pulsed drain current ratings meet any transient load requirements in your design.
This part belongs to Sanken Electric's lineup of trench technology power MOSFETs designed for general-purpose electronic equipment. The manufacturer emphasizes reliability through 100% UIEL testing and RoHS compliance. The product is intended for use in home appliances, office equipment, and telecommunication apparatus where efficient power switching is necessary.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Sanken Electric directly or authorized distributors for parametrically equivalent alternatives if this component is unavailable.
The absolute maximum rating for gate-to-source voltage (VGS) is ± 20 V.
Yes, the device can handle a single pulse avalanche energy of 89 mJ under specific test conditions (VDD = 30 V, L = 1 mH, IAS = 9.4 A).
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