DKI10299

$1.36

Description：MOSFET N-CH 100V 28A TO252
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:52a4b682978f Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

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Product introduction

DKI10299 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is MOSFET N-CH 100V 28A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DKI10299

Description：MOSFET N-CH 100V 28A TO252
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 14.2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 650µA
Gate Charge (Qg) (Max) @ Vgs：35.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2540 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：47W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DKI10299

DKI10299

Single FETs, MOSFETs Overview

The DKI10299 is a 100 V N-channel Trench Power MOSFET from Sanken Electric USA Inc. It features a maximum continuous drain current of 28 A and a typical on-resistance of 20.4 mΩ at VGS = 10 V, with a maximum rating of 30.0 mΩ. The device supports 4.5 V gate drive and exhibits low total gate charge (Qg) of 16.9 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to 150 °C and is housed in a TO-252 package.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient power conduction
Capable of operation with 4.5 V gate drive voltage
High speed switching characteristics enabled by low total gate charge
100% Unclamped Inductive Load (UIL) tested for reliability

Single FETs, MOSFETs Applications

DC-DC converters
Synchronous rectification circuits
General power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component revision level against the latest datasheet before procurement. Confirm that the TO-252 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Validate that the operating conditions remain within the absolute maximum ratings defined in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V breakdown voltage and approximately 28 A continuous current capability are required. Consider the 20.4 mΩ typical on-resistance for efficiency optimization in low-voltage applications. Evaluate the 4.5 V gate drive compatibility if driving logic levels directly. Assess the thermal performance based on the specific PCB copper pad area and ambient temperature conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Sanken Electric USA Inc. discrete semiconductor portfolio, specifically categorized as a power MOSFET. It utilizes N-channel trench technology to achieve low on-resistance and fast switching speeds. The product is designed for general-purpose electronic equipment and apparatus, contributing to power conversion systems in various industrial and consumer applications.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical specifications carefully if considering alternative manufacturers' components for redesign purposes.