DMB54D0UV-7

Overview

The DMB54D0UV-7 is a dual-component discrete semiconductor device manufactured by Diodes Incorporated, housed in an SOT-563-6 surface-mount package. It integrates one N-channel enhancement mode MOSFET and one PNP transistor within a single compact footprint. The N-channel MOSFET features a drain-source breakdown voltage of 50 V and a continuous drain current rating of 160 mA at +25°C. The integrated PNP transistor provides a collector-emitter voltage of 45 V with a continuous collector current of 100 mA. This configuration allows for space-efficient circuit designs requiring combined switching and logic functions.

Feature Summary

• Integrates an N-channel MOSFET and a PNP transistor into a single SOT-563 package
• Features low on-resistance for efficient power handling
• Includes very low gate threshold voltage capability for low-voltage drive applications
• Designed with low input capacitance to support fast switching speeds

Applications

• Battery protection circuits requiring combined switching and monitoring
• Portable electronic devices with strict space constraints
• Low-voltage logic interface applications
• Power management modules in mobile communication equipment

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets RoHS compliance standards as indicated in official documentation. Ensure the supplier provides valid traceability records for quality assurance. Cross-reference the manufacturer part number against the latest datasheet revision to confirm pinout compatibility. Request sample units for initial circuit validation before committing to bulk procurement orders.

Selection Notes

Select this component when design requirements demand a combined N-channel MOSFET and PNP transistor solution. The SOT-563 package is suitable for high-density PCB layouts where board space is limited. Consider the 50 V MOSFET breakdown voltage and 45 V PNP voltage ratings to ensure adequate margin for the target application. Evaluate the 160 mA and 100 mA current limits against peak load requirements. Verify that the low gate threshold voltage aligns with the available control logic levels.

Part Context

This device belongs to Diodes Incorporated's special purpose transistor series, designed to replace multiple discrete components. It consolidates switching and amplification functions into a unified package. The integration reduces assembly complexity and improves reliability by minimizing interconnect points. The SOT-563 form factor supports automated surface-mount manufacturing processes commonly used in consumer electronics production lines.

Replacement Considerations

The DMB53D0UV-7 serves as a functional substitute, offering an N-channel MOSFET paired with an NPN transistor instead of a PNP transistor. Verify polarity requirements before substitution. No other direct cross-model replacements are confirmed in public documentation.