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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 9.5A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V, 20V
- Current - Continuous Drain (Id) @ 25°C：9.5A, 8.7A
- Rds On (Max) @ Id, Vgs：17mOhm @ 11.8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：1454pF @ 6V
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：-
- Qualification：-
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Overview
The DMC1016UPD-13 is a complementary pair enhancement mode MOSFET in a PowerDI5060-8 package. It integrates an N-channel Q1 and a P-channel Q2. Q1 offers a drain-source voltage of 12V, with RDS(ON) at 17mΩ (VGS=4.5V) supporting 9.5A continuous current. Q2 provides -20V, with RDS(ON) at 20mΩ (VGS=-4.5V) supporting -8.7A. The device features low input capacitance for fast switching, ESD protection on the P-channel gate, and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel integration minimizes board space and simplifies power management circuit design.
- Thermally efficient PowerDI5060-8 package enables cooler running applications and high conversion efficiency.
- Low on-resistance characteristics minimize conduction losses across various gate drive voltages.
- Built-in ESD protection on the P-channel gate enhances reliability during handling and operation.
Applications
- Notebook battery power management
- DC-DC converters
- Loadswitch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 and halogen-free requirements if mandated by your assembly specifications. Ensure the procurement channel is authorized to guarantee JEDEC qualification standards are maintained.
Selection Notes
Select this part when a compact complementary switch solution is required for low-voltage DC-DC or load switch topologies. Verify that the system's gate drive voltage aligns with the specified RDS(ON) conditions (e.g., 4.5V or 2.5V). Consider the thermal resistance values if operating near the maximum junction temperature limits.
Part Context
This component belongs to Diodes Incorporated's complementary MOSFET family designed for portable electronics. It utilizes the PowerDI5060-8 case style, which provides enhanced thermal performance compared to standard surface-mount packages. The device is engineered to balance low static losses with dynamic switching speed for efficient power delivery.
Replacement Considerations
For automotive applications requiring AEC-Q101 qualification and PPAP capability, consult the related automotive grade parts with the 'Q-suffix'. Verify pinout compatibility and electrical parameters before substituting with other complementary MOSFET pairs from different manufacturers.
FAQ
What is the maximum continuous drain current for the N-channel MOSFET?
The N-channel Q1 supports a continuous drain current of 9.5A at TA = +25°C and 7.6A at TA = +70°C.
Does the P-channel MOSFET have gate protection?
Yes, the datasheet specifies that the Q2 P-Channel MOSFET includes ESD protected gate functionality.
What is the thermal resistance junction-to-case value?
The thermal resistance from junction to case (RθJC) is specified as 6.2 °C/W.
