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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 6.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V, 20V
- Current - Continuous Drain (Id) @ 25°C：6.1A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.5nC @ 8V, 11.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：787pF @ 6V, 576pF @ 10V
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC1028UVT-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating an N-channel and a P-channel device within a single TSOT-26 package. The N-channel transistor (Q1) features a drain-source voltage of 12V, with on-resistance values of 25mΩ at VGS=4.5V, 32mΩ at VGS=2.5V, and 40mΩ at VGS=1.8V. Continuous drain currents reach 6.1A at 25°C for the N-channel and -3.5A for the P-channel (Q2). The P-channel device supports a -20V breakdown voltage, exhibiting on-resistances of 80mΩ, 100mΩ, 140mΩ, and 210mΩ at respective gate voltages of -4.5V, -2.5V, -1.8V, and -1.5V. Total power dissipation is rated at 0.8W steady-state.
Feature Summary
- Complementary N-channel and P-channel integration in a compact TSOT-26 package
- Low on-state resistance optimized for high efficiency power management
- Fast switching speed supported by low input capacitance
- ESD protected gates with low input/output leakage characteristics
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -13 suffix indicates a tape and reel configuration containing 10,000 units per reel. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure the TSOT-26 footprint matches your PCB layout requirements before finalizing procurement.
Selection Notes
Select this component when space-constrained designs require a matched N-P channel pair for load switches or level shifting. The low on-resistance makes it suitable for applications demanding minimal voltage drop. Verify that the 12V rating for the N-channel and -20V for the P-channel align with your system's operating voltages. Consider the thermal resistance of 157°C/W for ambient temperature calculations.
Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed to minimize on-state resistance while maintaining superior switching performance. It serves as a complementary pair solution, replacing discrete components to save board space. The product is manufactured using silicon technology and is intended for general-purpose power management applications where efficiency and size are critical factors.
Replacement Considerations
Direct replacements must match the TSOT-26 package and complementary N-P channel configuration. Verify that substitute parts offer comparable on-resistance and voltage ratings. Check for equivalent pinout assignments to ensure compatibility without circuit redesign.
