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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 5.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.6A, 3.8A
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：914pF @ 6V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMC1029UFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel transistor provides a maximum drain-source voltage of 12V, with on-resistance values ranging from 29mΩ at VGS=4.5V to 65mΩ at VGS=1.5V. Continuous drain current reaches 5.6A at +25°C. The P-channel counterpart features a -12V breakdown voltage, with on-resistance between 61mΩ at VGS=-4.5V and 210mΩ at VGS=-1.5V. Total gate charge is approximately 10.5nC for the N-channel and 10.7nC for the P-channel.
Feature Summary
- Low on-state resistance optimized for high efficiency power management applications
- Low input capacitance designed to maintain superior switching performance
- Low profile construction with a maximum height of 0.6mm
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix '-13' against official documentation to confirm the 10000-unit tape and reel packaging configuration. Ensure that the component meets all applicable RoHS directives and environmental compliance standards required for the target manufacturing process before finalizing procurement orders.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage power paths. Evaluate the on-resistance specifications across various gate drive voltages to ensure compatibility with the system's logic levels. Confirm that the thermal dissipation capabilities align with the expected operating conditions and PCB copper coverage.
Part Context
This part belongs to the DMC1029UFDB series of complementary enhancement mode MOSFETs. The '-13' suffix specifically denotes the 10000-unit tape and reel packaging format, distinguishing it from other variants like the '-7' which utilizes a 3000-unit reel size.
Replacement Considerations
Cross-reference alternative complementary MOSFET pairs in the U-DFN2020-6 package. Verify that substitute components match the 12V drain-source voltage rating and provide comparable on-resistance and gate charge characteristics to maintain circuit performance.
