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Product Detailed Parameters
- Description：MOSFET N/P-CH 12V 5.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.6A, 3.8A
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：914pF @ 6V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC1229UFDB-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a U-DFN2020-6 (Type B) package, featuring a maximum height of 0.6mm. The N-channel transistor provides a drain-source voltage (BVDSS) of 12V with a maximum on-resistance (RDS(ON)) of 29mΩ at VGS=4.5V and a continuous drain current (ID) of 5.6A. The P-channel counterpart offers a BVDSS of -12V, a maximum RDS(ON) of 61mΩ at VGS=-4.5V, and a continuous ID of -3.8A. Total power dissipation reaches 1.4W under steady-state conditions.
Feature Summary
- Low on-resistance for high efficiency power management
- Low input capacitance to maintain superior switching performance
- Totally lead-free and fully RoHS compliant
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm that the ordering suffix matches the required tape and reel quantity. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage applications. The U-DFN2020-6 package suits space-constrained designs. Evaluate thermal resistance and power dissipation limits relative to the specific PCB copper coverage to ensure safe operation within the specified temperature range.
Part Context
This part belongs to the DMC1229 series of complementary MOSFETs from Diodes Incorporated. It shares the same electrical characteristics and package dimensions as the DMC1229UFDB-13 variant, differing only in the standard packaging quantity provided in the tape and reel format.
Replacement Considerations
The DMC1229UFDB-13 serves as a direct replacement offering identical electrical parameters and mechanical footprint, distinguished solely by its 10,000-unit tape and reel packaging configuration.
