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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.75A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：750mA, 600mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：500mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：DFN1612-6
- Grade：-
- Qualification：-
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Overview
The DMC2004LPK-7 is a complementary pair enhancement mode field effect transistor manufactured by Diodes Incorporated. It integrates an N-channel MOSFET (Q1) and a P-channel MOSFET (Q2) within a single X1-DFN1612-6 package. The N-channel device supports a drain-source voltage of 20V with a maximum continuous drain current of 750mA at +25°C, while the P-channel device handles -20V and -600mA under identical conditions. Both transistors feature low on-resistance, with typical values of 0.4Ω for the N-channel and 0.7Ω for the P-channel at VGS = ±4.5V. The component operates across a temperature range of -65°C to +150°C and includes ESD protection on the gates.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated in a single ultra-small surface mount package
- Low gate threshold voltage below 1V enabling efficient drive from low logic levels
- ESD protected gates to enhance reliability during handling and operation
- Lead-free finish compliant with RoHS directives and halogen/antimony free
Applications
- Battery protection circuits requiring compact dual-transistor solutions
- Load switch applications in portable consumer electronics
- Power management modules in mobile devices and notebooks
- General purpose switching in space-constrained PCB designs
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the X1-DFN1612-6 case dimensions align with the target footprint layout. Ensure compliance requirements match the lead-free and green device specifications outlined in the datasheet notes regarding halogen and antimony content limits.
Selection Notes
Select this component when a matched N-P channel pair is required for synchronous rectification or load switching in tight spaces. The low input capacitance and fast switching speed make it suitable for high-frequency applications. Verify that the thermal resistance of 250°C/W is acceptable for the intended power dissipation levels within the operating temperature range.
Part Context
This part belongs to the DMC2004 series of complementary MOSFETs designed for low-voltage, high-efficiency switching. It serves as a compact alternative to discrete dual-transistor assemblies, reducing board space and assembly complexity. The X1-DFN1612-6 package provides a small footprint suitable for modern miniaturized electronic devices.
Replacement Considerations
Check for automotive-grade equivalents if AEC-Q100 qualification is required. Verify pinout compatibility with existing layouts before substitution. Ensure thermal performance meets system requirements when replacing discrete components with this integrated pair.
