DMC2025UFDB-13

Overview

The DMC2025UFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel transistor provides a drain-source voltage (BVDSS) of 20V, with a maximum continuous drain current of 6.0A at +25°C and a static on-resistance of 25mΩ at VGS=4.5V. The P-channel counterpart features a BVDSS of -20V, a maximum continuous drain current of -3.5A at +25°C, and a static on-resistance of 75mΩ at VGS=-4.5V. Both devices operate within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrated complementary N-channel and P-channel enhancement mode MOSFETs in a compact footprint.
• Designed for high-efficiency power management applications through minimized on-state resistance.
• Features ESD protected gates and low input capacitance for superior switching performance.
• Compliant with RoHS standards and constructed using halogen-free green molding compounds.

Applications

• Load Switch
• Power Management Functions
• Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMC2025UFDB-7 for 3000 units per tape and reel, while the requested model includes the -13 suffix, which indicates a 10,000-unit tape and reel packaging quantity. Confirm that the required quantity aligns with this standard factory pack size before placing orders.

Selection Notes

Select this component for designs requiring a matched dual-transistor configuration in space-constrained environments. The U-DFN2020-6 package offers a small PCB footprint of 4mm² and a maximum height of 0.6mm. Ensure gate drive voltages remain within the specified limits of ±10V for the N-channel and ±8V for the P-channel to maintain safe operation.

Part Context

This part belongs to the DMC2025 series of complementary MOSFETs from Diodes Incorporated. It is specifically engineered to balance low conduction losses with fast switching speeds. The internal schematic reveals integrated gate protection diodes for both channels, enhancing robustness against electrostatic discharge events during handling and assembly.

Replacement Considerations

Direct replacements must match the U-DFN2020-6 package dimensions and electrical ratings. Verify that substitute components offer comparable RDS(ON) values and thermal resistance characteristics to ensure equivalent performance in the target application circuit.

FAQ

What are the maximum gate-source voltage ratings?

The N-channel device supports a maximum gate-source voltage of ±10V, whereas the P-channel device is rated for ±8V.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Typical characteristics show positive temperature coefficients for both N-channel and P-channel devices across the operating range.

Is the device suitable for automotive applications?

Standard versions are not explicitly qualified for automotive use. For applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, direct contact with Diodes Incorporated is required.