DMC2025UFDB-7

$0.48

Description：MOSFET N/P-CH 20V 6A 6UDFN
Series：-

SKU:4747292b78c2 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：486pF @ 10V, 642pF @ 10V
Power - Max：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMC2025UFDB-7

Overview

The DMC2025UFDB-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and P-channel device in a U-DFN2020-6 (Type B) package with a maximum height of 0.6mm. The N-channel transistor provides a drain-source voltage (BVDSS) of 20V, a continuous drain current (ID) of 6.0A at +25°C, and a maximum on-resistance (RDS(ON)) of 25mΩ at VGS = 4.5V. The P-channel transistor offers a BVDSS of -20V, an ID of -3.5A at +25°C, and a maximum RDS(ON) of 75mΩ at VGS = -4.5V. Total power dissipation is rated at 1.4W on a 1-inch square copper plate.

Feature Summary

Integrated complementary N-channel and P-channel enhancement mode MOSFETs within a single compact footprint.
Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features ESD protected gates and low input capacitance characteristics.

Applications

Load Switch
Power Management Functions
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The suffix '-7' indicates packaging in 3000-unit tape and reel format. Confirm that the required component meets all applicable regulatory standards, including RoHS compliance and halogen-free requirements, as specified in the manufacturer's product definitions.

Selection Notes

Select this component when a dual-channel solution is required for space-constrained designs. The U-DFN2020-6 package provides a PCB footprint of approximately 4mm². Ensure gate drive voltages align with the specified thresholds; the N-channel requires 4.5V for optimal RDS(ON), while the P-channel operates effectively at -4.5V. Consider thermal management constraints based on the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMC2025 series of complementary MOSFETs from Diodes Incorporated. It is designed specifically for applications requiring low on-resistance and efficient switching in portable power systems. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rating.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified source material. Consult the manufacturer directly for potential cross-references or updated series replacements.