DMC2025UFDBQ-7

$0.49

Description：MOSFET N/P-CH 20V 6A 6UDFN
Series：-

SKU:a71607e0b086 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 6A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：486pF @ 10V, 642pF @ 10V
Power - Max：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：Automotive
Qualification：AEC-Q101

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DMC2025UFDBQ-7

Overview

The DMC2025UFDBQ is a complementary pair enhancement mode MOSFET designed for automotive applications. It integrates an N-Channel and P-Channel device in a U-DFN2020-6 package. The N-Channel Q1 offers a maximum drain-source voltage (BVDSS) of 20V, with an on-resistance (RDS(ON)) of 25mΩ at VGS=4.5V and 35mΩ at VGS=2.5V. Continuous drain current reaches 6.0A at +25°C. The P-Channel Q2 provides -20V BVDSS, with RDS(ON) of 75mΩ at VGS=-4.5V and 140mΩ at VGS=-2.5V. Maximum continuous drain current is -3.5A at +25°C. Both devices feature ESD protected gates and operate within a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N-Channel and P-Channel MOSFETs integrated in a single compact package
Qualified to AEC-Q101 standards with PPAP capability for automotive reliability
Low profile design with a maximum height of 0.6mm and small PCB footprint
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Load Switch
Power Management Functions
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging format containing 3,000 units per reel. The -13 suffix denotes a larger tape and reel configuration with 10,000 units. Confirm that the required quantity aligns with these standard packaging options before placing orders to ensure proper handling and storage conditions are met.

Selection Notes

Select this component for circuits requiring low on-resistance and high switching efficiency in space-constrained environments. The N-Channel device supports up to 6.0A continuous current, while the P-Channel handles -3.5A. Ensure gate drive voltages meet the specified thresholds for optimal RDS(ON) performance. Verify thermal management requirements against the provided junction-to-ambient resistance values under your specific PCB copper layout conditions.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-grade complementary MOSFET pairs. It is manufactured in IATF 16949 certified facilities to support stringent automotive quality requirements. The U-DFN2020-6 package allows for efficient heat dissipation while maintaining a minimal board footprint suitable for modern portable electronics and power management systems.