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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A, 3.2A
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：713pF @ 10V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMC2041UFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a U-DFN2020-6 package featuring a maximum height of 0.6mm. The N-channel transistor provides a drain-source voltage (BVDSS) of 20V, with a maximum on-resistance (RDS(ON)) of 40mΩ at VGS = 4.5V and 65mΩ at VGS = 2.5V. Continuous drain current reaches 4.7A at +25°C for the N-channel and -3.2A for the P-channel. The P-channel device offers a BVDSS of -20V, with RDS(ON) values of 90mΩ at VGS = -4.5V and 137mΩ at VGS = -2.5V. Total power dissipation is rated at 1.4W steady state.
Feature Summary
- Low on-state resistance to minimize conduction losses
- Low input capacitance for superior switching performance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load switches
- Power-management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The suffix indicates the packing quantity and carrier type; for example, the -13 suffix corresponds to a tape and reel configuration with a packing quantity of 10,000 units. Confirm that the required packaging format aligns with automated assembly equipment specifications to ensure compatibility during manufacturing.
Selection Notes
Select this component when space constraints require a low-profile solution under 0.6mm. Ensure the application voltage does not exceed the 20V rating for either channel. Verify that the gate drive voltage meets the minimum requirements for optimal RDS(ON), specifically 4.5V or higher for full enhancement. Consider thermal management capabilities based on the specified junction-to-ambient thermal resistance.
Part Context
This part belongs to the DMC2041UFDB series from Diodes Incorporated. It is designed as a compact complementary pair suitable for high-efficiency power management applications. The device utilizes silicon technology and is housed in a U-DFN2020-6 Type B package. It is intended for use in portable electronics where size and efficiency are critical design parameters.
Replacement Considerations
Direct replacements must match the U-DFN2020-6 package and complementary N/P-channel configuration. Verify pinout compatibility, particularly the shared source connection. Check that replacement devices meet or exceed the 20V breakdown voltage and similar on-resistance characteristics to maintain circuit performance.
