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The DMC2053UFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel transistor provides a drain-source voltage of 20V, with a maximum on-resistance of 35mΩ at VGS=4.5V and a continuous drain current of 4.6A. The P-channel counterpart features a -20V breakdown voltage, a maximum on-resistance of 75mΩ at VGS=-4.5V, and a continuous drain current of -3.1A. The component operates across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the required packing quantity matches the datasheet specifications for the selected suffix. Ensure compliance with applicable environmental directives and verify the correct package type during the sourcing process.
Select this component for applications requiring a matched complementary pair in a minimal PCB area. Evaluate thermal dissipation requirements based on the specified junction-to-ambient resistance values. Verify gate drive voltages align with the threshold characteristics to ensure optimal on-resistance performance under expected operating conditions.
This part belongs to the DMC2053 series of complementary MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 (Type B) package, which offers a small physical footprint suitable for space-constrained designs. The series is engineered to balance low conduction losses with fast switching capabilities for modern electronic systems.
An automotive-compliant version of this component is available under the separate part number DMC2053UFDBQ. Verify if automotive qualification standards are required for the target application when considering this alternative.
The maximum height of the U-DFN2020-6 package is 0.6mm.
Yes, the component is designed for surface mount installation using the U-DFN2020-6 package.
The steady-state thermal resistance from junction to ambient is 153 °C/W when mounted on an FR-4 substrate with minimum recommended pad layout.