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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta), 3.2A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V, 5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V, 440pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC2053UVT-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single TSOT26 package. The N-channel unit provides a drain-source voltage of 20V, with on-resistance values of 35mΩ at VGS=4.5V and 43mΩ at VGS=2.5V. The P-channel unit offers -20V breakdown, featuring on-resistance of 74mΩ at VGS=-4.5V and 110mΩ at VGS=-2.5V. Both transistors operate across a temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact TSOT26 package
- Optimized for low on-state resistance while maintaining fast switching performance
- Low input capacitance and leakage characteristics for high efficiency power management
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the component against the official datasheet DS40560 Rev. 2-2 to confirm authenticity. Ensure the ordering suffix matches the required tape and reel quantity. Check for compliance with RoHS directives and verify that the device meets specific thermal and electrical requirements for the intended application environment.
Selection Notes
Select this component when space-constrained designs require matched N-channel and P-channel switching capabilities. Evaluate the gate threshold voltages and on-resistance specifications against the driving circuit's output levels. Consider the thermal resistance parameters and package limitations for heat dissipation in the target system layout.
Part Context
This part belongs to the DMC2053UVT series from Diodes Incorporated, designed as a complementary pair enhancement mode MOSFET. It is specifically engineered to minimize on-state resistance while preserving superior switching performance. The product targets applications demanding high efficiency in power management systems.
Replacement Considerations
Direct replacements include the DMC2053UVT-7 variant, which shares identical electrical characteristics but utilizes a 3000-unit tape and reel packaging format instead of the 10000-unit reel found in the -13 suffix version.
FAQ
What are the maximum continuous drain currents for the N-channel and P-channel units?
At TA = +25°C, the N-channel continuous drain current is 4.6A, while the P-channel continuous drain current is -3.2A.
Does the DMC2053UVT support lead-free soldering processes?
Yes, the device is totally lead-free, fully RoHS compliant, and features matte tin annealed terminals over a copper leadframe, making it suitable for standard surface mount assembly.
What is the operating temperature range for this MOSFET pair?
The junction and storage temperature range for both the N-channel and P-channel devices spans from -55°C to +150°C.
