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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta), 3.2A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V, 5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V, 440pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC2053UVTQ is a complementary pair enhancement mode MOSFET from Diodes Incorporated, housed in a TSOT26 package. It integrates an N-channel and P-channel device within a single component to minimize on-state resistance while maintaining superior switching performance. The N-channel unit features a drain-source voltage of 20V with a maximum on-resistance of 35mΩ at VGS=4.5V and a continuous drain current of 4.6A. The P-channel unit offers a -20V rating with a maximum on-resistance of 74mΩ at VGS=-4.5V and a continuous drain current of -3.2A. Designed for high efficiency power management, the device operates across a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Low On-State Resistance (RDS(ON))
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage Current
- Totally Lead-Free and Fully RoHS Compliant
- Halogen and Antimony Free "Green" Device
- Suitable for Automotive Applications (AEC-Q101 Qualified)
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The datasheet lists DMC2053UVTQ-7 for 3000 units per tape and reel, and DMC2053UVTQ-13 for 10000 units per tape and reel. Confirm that the requested quantity matches the available packaging options provided by the manufacturer to ensure correct procurement.
Selection Notes
Select this component for applications requiring a compact complementary MOSFET pair in a TSOT26 package. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance, specifically 4.5V for optimal N-channel performance and -4.5V for the P-channel. Consider the thermal resistance of 173°C/W for steady-state operation on FR-4 substrate when designing the heat dissipation strategy.
Part Context
This part belongs to the DMC series of complementary MOSFETs manufactured by Diodes Incorporated. It is designed as a next-generation solution to minimize on-state resistance while maintaining fast switching speeds. The device is AEC-Q101 qualified and suitable for automotive applications requiring specific change control, manufactured in IATF16949:2016 certified facilities.
Replacement Considerations
Direct replacements must match the TSOT26 package and complementary N/P channel configuration. Verify that substitute components meet or exceed the 20V drain-source voltage rating and provide comparable on-resistance values at the operating gate voltages. Check for equivalent thermal characteristics and ensure the replacement is also AEC-Q101 qualified if used in automotive contexts.
FAQ
What is the maximum continuous drain current for the N-channel MOSFET?
The maximum continuous drain current for the N-channel MOSFET is 4.6A at TA = +25°C.
Is the DMC2053UVTQ suitable for automotive applications?
Yes, the DMC2053UVTQ is AEC-Q101 qualified, PPAP capable, and suitable for automotive applications requiring specific change control.
What is the typical input capacitance for the N-channel device?
The typical input capacitance (Ciss) for the N-channel device is 369pF at VDS = 10V and VGS = 0V.
