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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta), 3.3A (Ta)
- Rds On (Max) @ Id, Vgs：42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA, 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V, 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：416pF @ 10V, 536pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC2057UVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single TSOT26 package. The N-channel unit provides a drain-source voltage (BVDSS) of 20V, with an on-resistance (RDS(ON)) of 42mΩ at VGS=4.5V and a continuous drain current (ID) of 4.0A. The P-channel unit offers a BVDSS of -20V, featuring an RDS(ON) of 70mΩ at VGS=-4.5V and an ID of -3.3A. Both channels are designed for low input capacitance and fast switching speeds.
Feature Summary
- Complementary N-channel and P-channel MOSFETs integrated in a single compact package
- Optimized for high efficiency power management applications through minimized on-state resistance
- Low input capacitance and fast switching speed characteristics
- Totally lead-free and fully RoHS compliant construction
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The DMC2057UVT-7 variant is supplied in tape and reel packaging containing 3000 units per reel. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, prior to final procurement integration.
Selection Notes
Select this component when space-constrained designs require paired N-channel and P-channel MOSFETs. Ensure the application operates within the 20V breakdown voltage limits. Verify that the gate drive voltages align with the specified thresholds for optimal on-resistance performance. Consider the thermal resistance values if operating near maximum current ratings.
Part Context
This part belongs to the DMC205x series of complementary MOSFETs from Diodes Incorporated. It shares the same TSOT26 footprint and general electrical architecture as other members like the DMC2058UNS-7, but differs in specific voltage and current ratings. The 'UVT' designation indicates the specific pinout and internal configuration for this dual-device package.
Replacement Considerations
Direct replacements must match the TSOT26 package and complementary N/P-channel configuration. Verify that substitute parts meet or exceed the 20V breakdown voltage and provide comparable on-resistance values at the intended gate drive voltages.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage is ±12V for the N-channel and ±8V for the P-channel.
Is the device suitable for high-temperature environments?
Yes, the operating and storage temperature range extends from -55°C to +150°C.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises, as shown in the typical characteristics graphs for both N-channel and P-channel devices.
