DMC2400UV-7

DMC2400UV-7

$0.29
  • Description:MOSFET N/P-CH 20V SOT563
  • Series:-

SKU:d25a9edd3d9e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.03A, 700mA
  • Rds On (Max) @ Id, Vgs:480mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:37.1pF @ 10V
  • Power - Max:450mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMC2400UV-7

Overview

The DMC2400UV-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 surface-mount package. It integrates one N-channel and one P-channel device within a single component. The N-channel transistor provides a drain-source breakdown voltage of 20V, with a maximum continuous drain current of 1030mA at VGS=4.5V and 740mA at VGS=1.8V. Its static drain-source on-resistance is specified as 0.5Ω at VGS=4.5V and 0.9Ω at VGS=1.8V. The P-channel counterpart features a -20V breakdown voltage, supporting a maximum continuous drain current of -700mA at VGS=-4.5V and -460mA at VGS=-1.8V, with corresponding on-resistances of 1.0Ω and 2.0Ω.

Feature Summary

  • Complementary N-channel and P-channel enhancement mode MOSFETs integrated into a single ultra-small surface mount package
  • Low gate threshold voltage below 1V to facilitate efficient switching at low drive voltages
  • ESD protected gate structure designed to minimize input/output leakage currents
  • Totally lead-free and fully RoHS compliant construction

Applications

  • Power management functions
  • Battery operated systems
  • Solid-state relays
  • Load switch applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard DMC2400UV-7 variant ships in a 3000-unit tape and reel format. Alternative suffixes exist for different reel quantities or pitch configurations. Confirm that the required packaging matches the intended automated assembly process before placing orders.

Selection Notes

Select this component for designs requiring a matched N/P channel pair in a minimal footprint. Ensure the driving circuit can supply sufficient gate voltage to achieve the lowest possible on-resistance values. Verify thermal constraints against the junction-to-ambient resistance ratings provided in the datasheet for steady-state and pulsed operations.

Part Context

This part belongs to the DMC2400 series of complementary MOSFET arrays from Diodes Incorporated. It serves as a compact solution for replacing discrete N-channel and P-channel transistors in space-constrained printed circuit board layouts. The SOT563 package allows for high-density mounting compared to traditional dual-transistor configurations.

Replacement Considerations

DMC2400UV-7B (8000/Tape & Reel)

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device is 1030mA when the gate-source voltage is 4.5V, and 740mA when the gate-source voltage is 1.8V.

Does the DMC2400UV include internal body diodes?

Yes, both the N-channel and P-channel devices feature intrinsic body diodes. The forward voltage characteristics for these diodes are specified in the electrical characteristics tables.

What is the operating temperature range for this component?

The operating and storage temperature range for the DMC2400UV extends from -55°C to +150°C.

DMC2400UV-7DMC2400UV-7
$0.29
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