DMC2400UV

Description：MOSFET N/P-CH 20V 1.03A SOT563
Series：-

SKU:10316afb17a0 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 1.03A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：1.03A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs：480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id：900mV @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V, 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：37.1pF @ 10V, 46.1pF @ 10V
Power - Max：450mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMC2400UV

Overview

The DMC2400UV is a complementary pair enhancement mode MOSFET in an SOT563 package. It integrates one N-channel and one P-channel device. The N-channel Q1 has a drain-source voltage (V_DSS) of 20V, with R_DS(on) max at 0.5Ω for V_GS=4.5V and 0.9Ω for V_GS=1.8V. Max continuous drain current is 1030mA at V_GS=4.5V. The P-channel Q2 has V_DSS of -20V, with R_DS(on) max at 1.0Ω for V_GS=-4.5V and 2.0Ω for V_GS=-1.8V. Max continuous drain current is -700mA at V_GS=-4.5V. Total gate charge is 0.5nC. Power dissipation is 0.45W steady state.

Feature Summary

Complementary N-Channel and P-Channel Enhancement Mode MOSFET Pair
Low On-Resistance with Low Gate Threshold Voltage below 1V
Ultra-Small Surface Mount Package Design
ESD Protected Gate Structure

Applications

Power Management Functions
Battery Operated Systems
Solid-State Relays
Load Switch Applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. Options include DMC2400UV-7 for 3000 units per tape and reel, DMC2400UV-7B for 8000 units with a 2mm pitch, and DMC2400UV-13 for 10000 units. Ensure the selected variant matches the required reel specifications for automated assembly processes.

Selection Notes

Select this component for low-voltage power management circuits requiring a compact footprint. The low gate threshold voltage supports operation with low logic-level drivers. Verify that the maximum continuous drain current requirements for both channels are within the specified limits at the intended operating temperature.

Part Context

This part belongs to Diodes Incorporated's DMC series of complementary MOSFETs. It is designed as a high-efficiency solution for power management applications. The device utilizes silicon technology and is housed in a lead-free SOT563 case material classified as UL 94V-0 flammability rating.

Replacement Considerations

Direct substitutes must match the SOT563 package, 20V/20V voltage ratings, and complementary configuration. Verify pinout compatibility and thermal resistance characteristics before implementation.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±12V for the N-channel and ±8V for the P-channel.

Is the device suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification or PPAP capability, contact Diodes Incorporated directly as standard parts may not meet these specific controls.