DMC2400UVQ-13

DMC2400UVQ-13

$0.06
  • Description:MOSFET N/P-CH 20V 1.03A SOT563
  • Series:-

SKU:30a51f68afac Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 1.03A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:1.03A (Ta), 700mA (Ta)
  • Rds On (Max) @ Id, Vgs:480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:37.1pF @ 10V, 46.1pF @ 10V
  • Power - Max:450mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMC2400UVQ-13

Overview

The DMC2400UVQ-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, packaged in an SOT563 surface mount housing. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source voltage of 20V, a maximum continuous drain current of 1030mA at 25°C, and an on-resistance of 0.5Ω at VGS=4.5V. Q2 provides a -20V breakdown, -700mA current capability, and 1.0Ω on-resistance at VGS=-4.5V. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Complementary N-channel and P-channel configuration for efficient power management
  • Low gate threshold voltage enabling operation with low logic levels
  • Ultra-small SOT563 surface mount package design
  • ESD protected gates for enhanced reliability

Applications

  • Power management functions
  • Battery operated systems
  • Solid-state relays
  • Load switches

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm RoHS compliance status and automotive qualification requirements such as AEC-Q101 or PPAP capability before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require integrated complementary switching capabilities. Evaluate thermal resistance values based on actual PCB copper area and mounting conditions to ensure junction temperatures remain within safe operating limits during continuous operation.

Part Context

This part belongs to the DMC series of complementary MOSFETs manufactured by Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.

Replacement Considerations

Consult official datasheets for alternative complementary pairs in similar packages. Verify pinout compatibility and electrical parameter margins before substituting any other manufacturer's components.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 1030mA at an ambient temperature of +25°C.

Is the DMC2400UVQ suitable for automotive applications?

Yes, the DMC2400UVQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for specific automotive applications.

What is the gate threshold voltage specification?

The gate threshold voltage (VGS(TH)) is specified as less than 1V, with typical values ranging from 0.5V to 0.9V under standard test conditions.

DMC2400UVQ-13DMC2400UVQ-13
$0.06
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