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The DMC2400UVQ-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, packaged in an SOT563 surface mount housing. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 features a drain-source voltage of 20V, a maximum continuous drain current of 1030mA at 25°C, and an on-resistance of 0.5Ω at VGS=4.5V. Q2 provides a -20V breakdown, -700mA current capability, and 1.0Ω on-resistance at VGS=-4.5V. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm RoHS compliance status and automotive qualification requirements such as AEC-Q101 or PPAP capability before finalizing procurement specifications.
Select this component when space-constrained designs require integrated complementary switching capabilities. Evaluate thermal resistance values based on actual PCB copper area and mounting conditions to ensure junction temperatures remain within safe operating limits during continuous operation.
This part belongs to the DMC series of complementary MOSFETs manufactured by Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Consult official datasheets for alternative complementary pairs in similar packages. Verify pinout compatibility and electrical parameter margins before substituting any other manufacturer's components.
The maximum continuous drain current for the N-channel device (Q1) is 1030mA at an ambient temperature of +25°C.
Yes, the DMC2400UVQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for specific automotive applications.
The gate threshold voltage (VGS(TH)) is specified as less than 1V, with typical values ranging from 0.5V to 0.9V under standard test conditions.