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Product Detailed Parameters
- Description：MOSFET N/P-CH 25V/12V TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V, 12V
- Current - Continuous Drain (Id) @ 25°C：500mA, 3.9A
- Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：27.6pF @ 10V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMC25D1UVT-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT-26 package. The N-channel transistor provides a drain-source breakdown voltage of 25V, a continuous drain current of 0.5A at VGS=4.5V, and a maximum on-resistance of 4Ω. The P-channel transistor features a -12V breakdown voltage, a continuous drain current of -3.9A at VGS=-4.5V, and a maximum on-resistance of 70mΩ at VGS=-2.5V. The component operates across a temperature range of -55°C to +150°C with a power dissipation rating of 1.3W.
Feature Summary
- Complementary N-channel and P-channel configuration in a compact TSOT-26 package
- Low on-resistance for high efficiency power management applications
- Fast switching speed combined with low input capacitance
- ESD protected gate structure
Applications
- DC-DC Converters
- Power Management Functions
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements prior to procurement. Ensure the selected variant matches the required thermal and electrical parameters for the target application environment.
Selection Notes
Select this component for designs requiring a matched complementary pair in a minimal footprint. Evaluate the distinct current handling capabilities between the N-channel and P-channel devices to ensure adequate margin for load requirements. Consider the low input capacitance for high-frequency switching applications where drive losses are critical.
Part Context
This part belongs to the DMC25 series of complementary MOSFETs from Diodes Incorporated. It shares the TSOT-26 mechanical outline with other members of the family but differs in internal die specifications and electrical ratings. The -13 suffix indicates a specific tape and reel packaging configuration provided by the manufacturer.
Replacement Considerations
Consult the official datasheet for verified substitute part numbers within the same product family or equivalent offerings from other manufacturers. Verify pinout compatibility and electrical parameter margins before substitution.
