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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.75A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta), 600mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V, 49pF @ 16V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC2710UDWQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOT363 surface-mount package. The N-channel transistor provides a drain-source voltage of 20V, with a maximum continuous drain current of 0.75A at +25°C and a typical on-resistance of 0.45Ω at VGS = 4.5V. The P-channel counterpart offers a -20V breakdown voltage, a maximum continuous drain current of -0.6A at +25°C, and a typical on-resistance of 0.75Ω at VGS = -4.5V. Both devices operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N/P-channel configuration in an ultra-small SOT363 surface mount package
- Optimized for low on-state resistance while maintaining superior switching performance
- Features low gate threshold voltage and low input capacitance for fast switching speeds
- Includes integrated ESD protection diodes and meets AEC-Q101 automotive qualification standards
Applications
- Battery-operated systems and solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format when sourcing components. Confirm that the procurement channel is authorized to ensure compliance with the manufacturer's standard terms and conditions. Cross-reference the date code markings against the official key to validate production year and month. Ensure all received units meet the specified RoHS and halogen-free material requirements outlined in the datasheet.
Selection Notes
Select this component for high-efficiency power management applications requiring minimal footprint. Evaluate the thermal resistance characteristics based on the specific PCB copper area and substrate used in the design. Consider the gate charge values for driver capability matching. Verify that the operating voltage and current limits align with the system's steady-state and pulsed requirements to maintain safe operation within the defined junction temperature range.
Part Context
This part belongs to the DMC2710UDWQ family of complementary MOSFETs produced by Diodes Incorporated. The product line focuses on miniaturization and efficiency for portable and automotive electronics. The 'DMC' prefix denotes the complementary nature of the internal N-channel and P-channel structures housed within the standardized SOT363 case outline.
Replacement Considerations
The datasheet lists the DMC2710UDWQ-13 as an alternative packaging option containing 10,000 units per tape and reel. No other cross-model substitutes are documented in the provided source material.
