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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 1.2A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta), 900mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V, 49pF @ 16V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
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Overview
The DMC2710UVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single TSOT26 package. The N-channel transistor supports a drain-source voltage of 20V with a maximum continuous drain current of 1.2A at +25°C, while the P-channel counterpart handles -20V and -0.9A under identical conditions. Static on-resistance for the N-channel reaches 0.4Ω at VGS = 4.5V, and 0.7Ω for the P-channel at VGS = -4.5V. Total power dissipation is rated at 0.5W in steady state.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFET Pair
- Ultra-Small Surface Mount Package Design
- ESD Protected Gate Structure
- Totally Lead-Free and Fully RoHS Compliant
Applications
- Portable Electronics
- High-Efficiency Power Management Applications
Procurement Notes
Verify the ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel quantity of 3,000 units. Confirm that the component meets specific environmental requirements such as halogen-free status if mandated by the design specifications. Ensure the manufacturing facility complies with relevant quality standards before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a dual-transistor solution in a compact footprint. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Verify that the gate drive voltage levels align with the specified thresholds for optimal on-resistance performance across the operating temperature range.
Part Context
This part belongs to the DMC2710 series of complementary MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The TSOT26 package provides a compact form factor suitable for dense printed circuit board layouts in modern electronic devices.
Replacement Considerations
Direct substitutes include the DMC2710UVT-13, which shares identical electrical characteristics but utilizes a 10,000-unit tape and reel packaging format. Cross-referencing pinouts and thermal parameters is essential when considering alternative manufacturers' components.
