SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMC2990UDJQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates one N-channel and one P-channel device in an SOT963 package. The N-channel transistor provides a drain-source breakdown voltage of 20V, with a maximum on-resistance of 0.99Ω at VGS=4.5V and a continuous drain current of 450mA. The P-channel transistor offers a -20V breakdown voltage, a maximum on-resistance of 1.9Ω at VGS=-4.5V, and a continuous drain current of -310mA. Both transistors feature a maximum gate threshold voltage of 1.0V and support an operating temperature range from -55°C to +150°C.
Verify the component against the official datasheet DS39168 Rev. 1-2 to confirm authenticity. Ensure the marking code matches the specified product type. Check that the ordering suffix corresponds to the required tape and reel packaging quantity. Confirm compliance with environmental directives such as RoHS 2 and REACH requirements before finalizing procurement.
Select this component when a compact dual MOSFET solution is required for automotive or general-purpose applications. The low gate threshold voltage makes it suitable for low-voltage control logic. Verify that the thermal resistance and power dissipation limits are adequate for the specific PCB layout and ambient temperature conditions expected in the design.
This part belongs to the DMC series of complementary pair enhancement mode MOSFETs produced by Diodes Incorporated. It is designed specifically to meet stringent automotive reliability standards. The SOT963 package allows for high-density mounting on printed circuit boards while maintaining electrical performance suitable for portable and space-constrained electronic devices.
Direct replacements must match the 20V rating, SOT963 package dimensions, and complementary N/P-channel configuration. Verify that any substitute component meets AEC-Q101 qualification if used in automotive contexts. Ensure equivalent on-resistance and gate charge characteristics to maintain switching performance.
The maximum gate threshold voltage (VGS(TH)) is 1.0V for the N-channel and -1.0V for the P-channel, measured at ID = 250μA.
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for automotive applications.
The operating and storage temperature range (TJ, TSTG) is from -55°C to +150°C.