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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.5A SOT963
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta), 360mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 4.5V, 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：21.5pF @ 15V, 17pF @ 16V
- Power - Max：380mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The DMC2991UDJ is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SOT-963 (SOT563) surface-mount package measuring 1mm x 1mm. The N-channel transistor provides a maximum drain-source voltage of 20V with a continuous drain current of 500mA at 25°C, while the P-channel counterpart offers -20V breakdown and -360mA continuous current. Both channels feature low on-state resistance and fast switching speeds, supported by a total power dissipation rating of 0.38W and an operating temperature range from -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs integrated in a single ultra-small 1mm x 1mm SOT-963 package
- Low on-state resistance optimized for high-efficiency power management applications
- Very low gate threshold voltage ensuring reliable operation at reduced gate drive levels
- ESD protected gate structure combined with fast switching speed and low input capacitance
Applications
- General-purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard part number DMC2991UDJ-7 utilizes a tape and reel carrier with a packing quantity of 10,000 units. An alternative suffix, -7B, exists which indicates a different taping orientation but maintains identical electrical characteristics. Confirm the required reel orientation matches your automated assembly equipment specifications before placing orders.
Selection Notes
Select this component for designs requiring matched N/P-channel pairs in minimal board space. Ensure the application current remains below the 500mA limit for the N-channel and 360mA for the P-channel at 25°C ambient conditions. Verify that the gate drive voltage meets the minimum requirements to achieve the specified low on-resistance values across the intended operating temperature range.
Part Context
This device belongs to Diodes Incorporated's portfolio of small-signal complementary MOSFET arrays designed for portable electronics and battery-powered systems. It serves as a compact solution for load switching and signal routing where board area is constrained. The SOT-963 package allows for high-density PCB layouts compared to discrete dual-transistor solutions.
Replacement Considerations
Direct pin-compatible replacements include the DMN2991UDA-7B and DMC2990UDJQ-7. Verify that the substitute devices maintain equivalent voltage ratings, current capabilities, and thermal performance suitable for the specific circuit requirements.
