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The DMC2991UDR4-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single X2-DFN1010-6 package. The N-channel transistor provides a maximum drain-source voltage (BVDSS) of 20V, with an on-resistance (RDS(ON)) ranging from 0.5Ω to 2.4Ω depending on the gate-source voltage. The P-channel counterpart features a -20V BVDSS and an RDS(ON) between 1.9Ω and 5.0Ω. Both channels exhibit low gate threshold voltages of ±1.0V maximum, enabling efficient switching in low-voltage power management applications.
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 5000 units per carrier. Confirm that the component meets RoHS 3 compliance standards and is free from intentionally added lead, halogens, and antimony. Ensure the selected supplier sources directly from authorized distribution channels to guarantee product authenticity and traceability.
Select this component when designing low-voltage systems requiring matched complementary switching pairs in a minimal footprint. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Verify that the required gate drive voltage aligns with the specified threshold ranges to ensure optimal conduction performance and minimize static power dissipation during operation.
This device belongs to the DMC series of complementary MOSFETs produced by Diodes Incorporated. It utilizes the X2-DFN1010-6 package type, which offers a small form factor suitable for space-constrained printed circuit board layouts. The part represents a newer generation design focused on minimizing on-state resistance while maintaining fast switching speeds for modern portable electronics.
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume functional equivalence based solely on package dimensions or general electrical ratings without verifying pinout compatibility and specific parameter tolerances.