DMC3016LDV-13

$0.86

Description：MOSFET N/P-CH 30V 21A PWRDI3333
Series：-

SKU:020f498b733a Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 21A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs：12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1184pF @ 15V, 1188pF @ 15V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8
Grade：Automotive
Qualification：AEC-Q101

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DMC3016LDV-13

Overview

The DMC3016LDV-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single PowerDI3333-8 (Type UXC) package. The N-channel transistor provides a drain-source voltage of 30V, with a maximum on-resistance of 12mΩ at VGS=10V and a continuous drain current of 21A. The P-channel counterpart features a -30V breakdown voltage, a maximum on-resistance of 25mΩ at VGS=-10V, and a continuous drain current of -15A. The component operates across a temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration in a single compact package
Low on-state resistance for high efficiency power management applications
Fast switching speed combined with low input capacitance
Totally lead-free and fully RoHS compliant construction

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' against official documentation to confirm the tape and reel packaging quantity of 3,000 units. Ensure that the requested part number matches the exact electrical characteristics and package type defined in the manufacturer's datasheet DS38936 Rev. 1-2. Cross-reference the date code marking format SD5 YYWW during physical inspection to validate authenticity and traceability.

Selection Notes

Select this component when a dual-channel solution is required for space-constrained designs. The PowerDI3333-8 package offers a small footprint suitable for surface mount assembly. Evaluate the thermal resistance values provided in the datasheet to ensure adequate heat dissipation for the intended load conditions. Confirm that the gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This device belongs to the DMC3016 series of complementary MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the DMC3016LDV-7 variant, differing primarily in the packaging quantity. Both variants utilize the identical PowerDI3333-8 (Type UXC) case and are designed for advanced information level applications requiring high efficiency.