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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 21A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc), 15A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1184pF @ 15V, 1188pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3016LDV-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single PowerDI3333-8 (Type UXC) package. The N-channel transistor provides a drain-source breakdown voltage of 30 V, with a maximum on-resistance of 12 mΩ at VGS = 10 V and a continuous drain current of 21 A at TC = +25°C. The P-channel counterpart features a -30 V breakdown voltage, a maximum on-resistance of 25 mΩ at VGS = -10 V, and a continuous drain current of -15 A under the same thermal conditions. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration in a single compact package
- Low on-state resistance for high efficiency power management applications
- Fast switching speed combined with low input capacitance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix '-7' against official documentation to confirm the 2,000-unit tape and reel packaging format. Ensure that the component meets the required environmental standards, specifically RoHS compliance and the absence of intentionally added lead, halogens, and antimony as defined by the manufacturer's green product guidelines.
Selection Notes
Select this component when a dual-channel solution is required for space-constrained designs utilizing the PowerDI3333-8 footprint. Evaluate the thermal performance based on the application's PCB copper area, as the datasheet specifies distinct power dissipation ratings depending on whether the board uses minimum pad layouts or extensive thermal biasing to the bottom layer.
Part Context
This part belongs to the DMC3016 series of advanced complementary MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The 'LDV' designation indicates the specific electrical characteristics and package type, distinguishing it from other variants in the family such as those with different pin configurations or thermal profiles.
Replacement Considerations
DMC3016LSD-13
FAQ
What is the maximum pulsed drain current for the N-channel device?
The maximum pulsed drain current for the N-channel device is 70 A, measured with a 380μs pulse duration and a duty cycle of 1%.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage exhibits a negative temperature coefficient, decreasing as the ambient temperature increases from -55°C to +150°C.
What are the typical total gate charge values for the N-channel MOSFET?
The typical total gate charge is 9.5 nC when tested at VGS = 4.5 V, and 21 nC when tested at VGS = 10 V.
