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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 7.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta), 6.8A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 15V, 1188pF @ 15V
- Power - Max：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3025LNS-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single POWERDI®3333-8 package. The N-channel component provides a drain-source voltage of 30V, with maximum on-resistance values of 25mΩ at VGS=10V and 35mΩ at VGS=4.5V. The continuous drain current reaches 7.2A at 25°C. The P-channel counterpart features a -30V breakdown voltage, with maximum on-resistance of 28mΩ at VGS=-10V and 38mΩ at VGS=-4.5V, supporting a continuous drain current of -6.8A at 25°C.
Feature Summary
- Complementary Pair Configuration
- Low On-Resistance
- Fast Switching Speed
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a 2,000-unit tape and reel configuration, while the -13 suffix denotes a 3,000-unit tape and reel. Confirm that the required packaging aligns with production volume needs before finalizing procurement orders.
Selection Notes
Select this component for applications requiring matched N-channel and P-channel switching in a compact footprint. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance levels. Verify thermal management capabilities against the specified junction-to-ambient resistance values under actual operating conditions.
Part Context
This part belongs to the DMC3025LNS series of complementary MOSFETs from Diodes Incorporated. It utilizes the POWERDI®3333-8 surface mount package designed for efficient thermal dissipation and space-constrained layouts. The series is engineered to balance low conduction losses with high-speed switching performance.
Replacement Considerations
Direct replacements must match the 30V rating, complementary channel configuration, and POWERDI®3333-8 package dimensions. Evaluate alternative parts based on comparable RDS(ON) specifications and thermal resistance characteristics to ensure equivalent circuit performance.
