DMC3025LSD-13

$0.61

Description：MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Series：-

SKU:814bfabb7ae8 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.5A, 4.2A
Rds On (Max) @ Id, Vgs：20mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：501pF @ 15V
Power - Max：1.2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMC3025LSD-13

Overview

The DMC3025LSD-13 is a complementary enhancement mode MOSFET pair manufactured by Diodes Incorporated in an SO-8 package. The N-channel device (Q2) provides a drain-source voltage of 30V, with maximum on-resistance values of 20mΩ at VGS=10V and 32mΩ at VGS=4.5V. It supports continuous drain currents up to 8.5A at 25°C. The P-channel device (Q1) offers -30V breakdown, with maximum on-resistance of 45mΩ at VGS=-10V and 85mΩ at VGS=-4.5V, supporting continuous currents up to 5.5A at 25°C. Total power dissipation reaches 1.5W at 25°C.

Feature Summary

Complementary N-Channel and P-Channel configuration for push-pull applications
Minimized on-state resistance combined with fast switching performance
Qualified to AEC-Q101 standards for high reliability automotive applications

Applications

DC Motor Control
DC-AC Inverters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the component meets RoHS directives and contains no intentionally added lead or halogen compounds as specified in the manufacturer's environmental documentation.

Selection Notes

Select this component when a matched N-P channel pair is required for low-voltage power management. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON). Verify thermal constraints against the junction-to-ambient resistance ratings for the target PCB layout.

Part Context

This part belongs to the DMC3025LSD series of advanced information complementary MOSFETs. It is designed specifically for high-efficiency power management circuits where minimizing conduction losses while maintaining rapid switching transitions is critical for system performance.