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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 4.2A (Ta)
- Rds On (Max) @ Id, Vgs：20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V, 5.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：501pF @ 15V, 590pF @ 25V
- Power - Max：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMC3025LSDQ-13 is a complementary enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SO-8 package. The N-channel component provides a drain-source voltage of 30V, with a maximum on-resistance of 20mΩ at VGS=10V and 7.4A. The P-channel counterpart offers -30V breakdown, featuring a maximum on-resistance of 45mΩ at VGS=-10V and -5.2A. Both transistors support a junction temperature range from -55°C to +150°C and are qualified to AEC-Q101 standards for automotive reliability.
Feature Summary
- Complementary N-channel and P-channel configuration in a single SO-8 package
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Low on-resistance characteristics for efficient power switching
- Fast switching speed supported by low input capacitance
Applications
- DC motor control circuits
- DC-AC inverters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2,500 units per carrier. Confirm that the component meets RoHS 3 compliance and is halogen-free. Ensure the design accommodates the specified thermal resistance values under steady-state conditions using FR-4 substrates.
Selection Notes
Select this component when a matched complementary pair is required for bridge or half-bridge topologies. The SO-8 package limits total power dissipation compared to larger footprints. Verify gate drive voltages align with the specified thresholds for optimal RDS(ON) performance across the operating temperature range.
Part Context
This part belongs to the DMC3025 series of complementary MOSFETs designed specifically for automotive environments. It is manufactured in IATF 16949 certified facilities to ensure strict change control and quality consistency required by automotive OEMs and tier-one suppliers.
Replacement Considerations
Direct replacements must match the SO-8 package, 30V rating, and complementary configuration. Verify pinout compatibility between Pin 1 (G1), Pin 4 (D1), Pin 5 (D2), and Pin 8 (G2). Check if alternative parts meet the same AEC-Q101 qualification level.
