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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6.6A/6.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.6A, 6.8A
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：472pF @ 15V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMC3028LSD-13 is a complementary dual enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel device (Q1) and a P-channel device (Q2) within a single SOIC-8 package. The N-channel component provides a drain-source breakdown voltage of 30V, a continuous drain current of 7.1A at 25°C, and an on-resistance of 28mΩ at VGS=10V. The P-channel component offers a -30V breakdown voltage, a continuous drain current of -7.4A at 25°C, and an on-resistance of 25mΩ at VGS=-10V. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates matched N-channel and P-channel enhancement mode MOSFETs into a single surface-mount package for space-efficient designs.
- Features low on-resistance characteristics to support high-efficiency power management applications.
- Designed with fast switching speeds suitable for demanding drive architectures.
Applications
- Motor control systems
- LCD TV and monitor backlighting circuits
- DC-DC converters
- General power management functions
Procurement Notes
Verify the specific ordering suffix '-13' against official manufacturer documentation to confirm reel size and tape width specifications before procurement. Ensure that the required quantity aligns with standard factory packaging configurations. Confirm compliance requirements such as RoHS status and halogen-free composition directly from the datasheet notes prior to finalizing supply chain agreements.
Selection Notes
Select this component when a compact solution requiring both N-channel and P-channel switching capabilities is necessary. Evaluate thermal resistance values under actual PCB copper coverage conditions to ensure adequate heat dissipation. Compare gate charge parameters against driver capabilities to optimize switching performance and minimize power loss in the target application circuit.
Part Context
This part belongs to the DMC3028 series of complementary dual MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOIC-8 case constructed from molded plastic with a matte tin finish on the terminals. The product marking code 'C3028LD' identifies the specific device type on the component body.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter tolerances if considering alternative manufacturers without official substitution data.
