SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMC3028LSDXQ-13 is a complementary pair enhancement mode MOSFET in an SO-8 package. It integrates an N-channel Q1 and P-channel Q2. Q1 offers a maximum RDS(ON) of 27mΩ at VGS=10V with ID max of 7.2A, and 35mΩ at VGS=4.5V with ID max of 6.0A. Q2 provides a maximum RDS(ON) of 25mΩ at VGS=-10V with ID max of -7.6A, and 41mΩ at VGS=-4.5V with ID max of -6.2A. Both channels feature a Drain-Source Voltage (VDSS) of ±30V and Gate-Source Voltage (VGSS) of ±20V. The device operates within a temperature range of -55°C to +150°C.
Verify the component against the official Diodes Incorporated datasheet DS37963 Rev. 1-2. Confirm the SO-8 package type and the specific ordering suffix -13 indicates tape and reel packaging with a quantity of 2,500 units per reel. Ensure compliance with automotive PPAP requirements if applicable to the design.
Select this component for applications requiring a compact complementary MOSFET pair in an SO-8 footprint. Consider the low on-resistance values for efficiency in power management circuits. Verify that the 30V voltage rating meets the system requirements and that the thermal characteristics align with the intended heat dissipation environment.
This part belongs to the DMC3028LSD family of complementary MOSFETs from Diodes Incorporated. It shares electrical characteristics with variants such as DMC3028LSDXQ and DMC3028LSD. The -13 suffix specifically denotes the tape and reel packaging format used for automated assembly processes.
Compatible substitutes include DMC3028LSDXQ and DMC3028LSD. These parts share identical electrical specifications and pin configurations. Verify package compatibility and ensure any alternative meets the same AEC-Q101 qualification standards if required by the application.