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The DMC3032LFDB-13 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single U-DFN2020-6 package. The N-channel transistor provides a drain-source breakdown voltage of 30V, with a maximum continuous drain current of 5.3A at +25°C and a static on-resistance of 30mΩ at VGS=10V. The P-channel counterpart features a -30V breakdown voltage, a maximum continuous drain current of -3.4A at +25°C, and a static on-resistance of 70mΩ at VGS=-10V. Both transistors operate within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' against official manufacturer documentation to confirm the 10,000-unit tape and reel packing quantity. Ensure that the component meets all applicable environmental directives and quality standards required for the intended deployment environment before finalizing procurement orders.
Select this component when a matched complementary pair is required for synchronous rectification or high-efficiency power stages. Evaluate the thermal resistance characteristics and ensure adequate copper area on the PCB substrate to manage power dissipation effectively under steady-state operating conditions.
This part belongs to the DMC3032LFDB series from Diodes Incorporated. The '-13' suffix specifically denotes the packaging format as a 10,000-unit tape and reel, distinguishing it from other variants like the '-7' which utilizes a 3,000-unit carrier.
Consult official manufacturer cross-reference lists for verified substitutes. Do not assume pin compatibility or electrical equivalence with generic complementary pairs without validating datasheet parameters.