DMC3036LSD-13

Description：MOSFET N/P-CH 30V 5A/4.5A 8SOP
Series：-

SKU:a44a1e540779 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 5A/4.5A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5A, 4.5A
Rds On (Max) @ Id, Vgs：36mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：431pF @ 15V
Power - Max：1.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

Download product information

DMC3036LSD-13

Overview

The DMC3036LSD-13 is a complementary enhancement mode MOSFET pair from Diodes Incorporated, housed in an SO-8 package. The N-channel device features a 30V drain-source voltage and a maximum on-resistance of 36mΩ at VGS=10V, supporting a continuous drain current of 6.9A. The P-channel counterpart offers -30V breakdown and 36mΩ resistance at VGS=-10V, with a continuous current rating of 6.0A. Total gate charge reaches 7.9nC for the N-channel and 21.1nC for the P-channel at specified test conditions. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration integrated into a single dual-channel package
Qualified to AEC-Q101 standards for high reliability applications
Designed to minimize on-state resistance while maintaining superior switching performance

Applications

Motor control systems
Power management functions
DC-DC converters
Inverter circuits

Procurement Notes

Verify the obsolete status before procurement, as the datasheet explicitly marks this part as not recommended for new design. Confirm availability through authorized distributors or surplus channels. Ensure the specific ordering suffix matches the required tape and reel packaging quantity. Cross-reference the exact electrical parameters against the target application requirements to ensure compatibility with modern alternatives.

Selection Notes

Select this component only if legacy board compatibility or specific historical design constraints require the exact DMC3036LSD specifications. Evaluate the thermal characteristics, specifically the junction-to-ambient resistance, to ensure adequate heat dissipation in the intended enclosure. Compare the gate charge values against available driver capabilities to verify switching speed limitations. Consider the transition to the recommended replacement model for new implementations.

Part Context

This component belongs to the DMC30xxLSD series of complementary MOSFET pairs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in a standard SO-8 footprint. The product line focuses on providing matched N/P channel characteristics for efficient power switching applications requiring low on-resistance and fast switching speeds.