DMC3060LVT-7

$0.51

Description：MOSFET N/P-CH 30V 3.6A TSOT23-6
Series：-

SKU:caafd37299a1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 3.6A TSOT23-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：395pF @ 15V, 324pF @ 15V
Power - Max：830mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-23-6
Grade：-
Qualification：-

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DMC3060LVT-7

Overview

The DMC3060LVT-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a TSOT26 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). The N-channel transistor supports a drain-source voltage of 30V with a maximum continuous drain current of 3.6A at +25°C and an on-resistance of 60mΩ at VGS=10V. The P-channel counterpart features a -30V breakdown voltage, a -2.8A continuous current rating, and an on-resistance of 95mΩ at VGS=-10V. Both devices operate within a junction temperature range of -55°C to +150°C.

Feature Summary

Complementary N-channel and P-channel configuration for efficient power management
Low on-state resistance to minimize conduction losses
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant construction

Applications

Backlighting circuits
DC-DC converters
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity. The '-7' suffix indicates a standard tape and reel quantity of 3,000 units. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.

Selection Notes

Select this component when a matched N-channel and P-channel pair is required in a compact TSOT26 footprint. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Verify thermal dissipation requirements against the provided junction-to-ambient thermal resistance values under expected operating conditions.

Part Context

This part belongs to the DMC series of complementary MOSFETs from Diodes Incorporated. It serves as a dual-transistor solution designed to replace discrete N and P-channel components, saving board space. The device is engineered for high-efficiency applications requiring low static and dynamic power losses.

Replacement Considerations

Direct replacements include the DMC3060LVT-13, which shares identical electrical characteristics but differs in packaging quantity (10,000 units per reel). Verify pinout compatibility and thermal performance if substituting with other complementary MOSFET pairs.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device (Q1) is 3.6A at an ambient temperature of +25°C.

Does the DMC3060LVT-7 support automotive applications?

The datasheet does not explicitly list AEC-Q101 certification for this specific part number. Customers should verify specific automotive qualification requirements directly with the manufacturer.