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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 2.7A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA, 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V, 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 15V, 287pF @ 15V
- Power - Max：880mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
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Overview
The DMC3061SVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two independent N-channel field-effect transistors within a single TSOT-26-6 surface-mount package. The device supports a drain-source voltage of 30V and delivers a continuous drain current of up to 3.4A. Key electrical characteristics include a maximum on-resistance of 200mΩ, a gate charge of 3.5nC, and a power dissipation rating of 1.08W. It operates reliably across a temperature range from -55°C to +150°C, making it suitable for compact circuit designs requiring dual switching capabilities.
Feature Summary
- Dual N-channel configuration in a compact TSOT-26-6 package
- Enhancement mode operation with low gate charge for efficient switching
- High thermal stability supporting extended operating temperatures
Applications
- DC-DC converter synchronous rectification
- Load switching applications
- Power management circuits
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Diodes Incorporated or authorized distributors before finalizing procurement. Confirm that the TSOT-26-6 package dimensions align with your PCB footprint requirements. Ensure that the 30V voltage rating and 3.4A current capacity meet the specific design constraints of your target application.
Selection Notes
Select this component when a dual N-channel solution is required in a small form factor. Compare the 200mΩ on-resistance against alternative packages if lower conduction losses are critical. Verify that the 1.08W power dissipation rating provides sufficient thermal headroom for your expected operating conditions and ambient temperature environment.
Part Context
This part belongs to the DMN3061 series of dual MOSFETs from Diodes Incorporated. It shares functional similarities with other devices in the family but is distinguished by its specific TSOT-26-6 packaging and associated electrical parameters. The series is designed to provide space-efficient solutions for dual-switching needs in portable and industrial electronics.
Replacement Considerations
Check for direct pin-compatible substitutes within the same manufacturer's portfolio that offer improved Rds(on) or higher current ratings. Verify that any replacement maintains the 30V Vds specification and fits the TSOT-26-6 footprint without requiring layout modifications.
